Abstract: In this work, for the first time, equivalent oxide thickness (EOT)-scaled FinFETs are demonstrated based on a novel thickness-proportion controlled HfO2-ZrO2-HfO2 (TPC-HZH) superlattice gate ...
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Abstract: The electrical conduction mechanisms of Ni-Cr thin film resistor are demonstrated by different film thickness through scattering models fitting. The resistivity and temperature coefficient ...