Abstract: A new high-speed low-power logic circuit using Schottky barrier diodes to avoid saturation of bipolar transistors is described. An experiment using discrete devices and a theoretical ...
High-Performance Silicon Nanowire Reconfigurable Field Effect Transistors Using Flash Lamp Annealing
Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden 01328, Germany ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback